^t. c/ .\i.u lptoaucti., dnc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 designer's? data sheet npn silicon power transistor 1 kv switchmode series these transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. they are particularly suited for line-operated switchmode applications. typical applications: features: MJH16006A power transistors 8 amperes 500 volts 150 watts switching regulators inverters solenoids relay drivers motor controls deflection circuits collector-emitter voltage ? vcev = 1000 vdc fast turn-off times 80 ns inductive fall time ? 100c (typ) 120 ns inductive crossover time ? 100c (typ) 800 ns inductive storage time ? 100c (typ) 100c performance specified for: reverse-biased soa with inductive load switching times with inductive loads saturation voltages leakage currents extended fbsoa rating using ultra-fast rectifiers extremely high rbsoa capability maximum ratings rating collector-emitter voltage collector-emitter voltage emitter-base voltage collector current ? continuous ? peakco base current ? continuous ? peako) total power dissipation @ tc = 25c @tc = 100c derate above tc = 25c operating and storage junction temperature range symbol vceo vcev veb ig 'cm ib ibm pd tj. tstg value 500 1000 6 8 16 6 12 125 50 1 -55 to 150 unit vdc vdc vdc adc adc watts w/c c thermal characteristics characteristic thermal resistance, junction to case lead temperature for soldering purposes: 1/8" from case for 5 seconds symbol rejc tl max 1 275 unit c/w "c (1) pulse test: pulse width = 5 ms, duty cycle < 10%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
mjh16oo6a electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min typ max unit off characteristics^) collector-emitter sustaining voltage (table 1) (ic = 100ma, ib = 0) collector cutoff current (vcev = 1000 vdc, vbe(off) = 1 -5 vdc) (vcev = 1000 vdc, vse(off) = 1 -5 vdc, tc = 100c) collector cutoff current v(~r=/~i \ 40(1 vrirl (tj = 100c) (tj = 150c) tsv tfi tc *sv tfi tc ? ? ? ? ? ? 800 80 120 1000 90 150 2000 200 300 ? _ ? ns resistive load (table 2) delay time rise time storage time fall time storage time fall time (ic = 5 adc, vcc = 250 vdc, 'bi ~ 0 66 adc pw = 30 us, duty cycle < 2%) (lb2 = 1-3 adc, rbi = rb2 = 4 ?) /wnr/ ff\ s v/rlr1! vvbe(otr) vuuj td tr ts tf ts tf ? ? ? ? ? ? 25 400 1400 175 475 100 100 700 3000 400 ? ? ns (1) pulse test: pw = 300 us, duty cycle s 2%.
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